BC807-25,235
- Description
- Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
- Collector Emitter Saturation Voltage
- -700mV
- Collector Emitter Voltage (VCEO)
- -45V
- hFE Min
- 160
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
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- Maximum Collector Current: -500mA
- Collector Emitter Breakdown Voltage: -45V
- Collector Emitter Saturation Voltage: -700mV
- hFE Min: 160
- Power Dissipation: 250mW
- Compact SOT-23 Package
The Nexperia Small Signal Bipolar Transistor is a high-performance PNP transistor designed for efficient signal amplification and switching applications. With a maximum collector current of 0.5A and a collector emitter breakdown voltage of -45V, this transistor is ideal for various electronic circuits. Housed in a compact SOT-23 package, it ensures reliable performance in space-constrained designs while maintaining excellent thermal stability with a maximum operating temperature of 150°C.
The Small Signal Bipolar Transistor is commonly used in amplifying and switching applications within electronic circuits. It is particularly suited for low-power applications, such as signal processing and drive circuits, due to its compact SOT-23 package. Engineers and designers in the electronics industry rely on this component for its reliability and performance in various ambient temperature conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.