BFU590GX
- Description
- BFU590G Series 12 V 200 mA 2 W NPN Wideband Silicon RF Transistor - SOT-223
- Collector Emitter Voltage (VCEO)
- 12V
- Continuous Collector Current
- 80mA
- Transition Frequency
- 8.5GHz
- Gain
- 8dB
- hFE Min
- 60
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- High Transition Frequency: 8.5G Hz
- Max Collector Current: 200mA
- Power Dissipation: 2W
- Wide Collector Emitter Breakdown Voltage: 12V
- Compact SOT-223 Package
- RoHS Compliant
The NXP Semiconductors BFU590G Series is a high-performance NPN Wideband Silicon RF Transistor designed for applications requiring efficient signal amplification and high-frequency performance. With a compact SOT-223 package, this transistor is ideal for surface mount technology and operates effectively in a variety of RF applications. Its robust specifications ensure reliable performance in demanding environments, making it a preferred choice for engineers and designers in the telecommunications and electronics sectors.
The BFU590G Series NPN Wideband Silicon RF Transistor is commonly used in RF amplification applications, capable of handling high frequencies up to 8.5 GHz. It is ideal for surface mount technology in compact designs and is utilized by engineers in telecommunications and consumer electronics to enhance signal integrity. With its robust power dissipation of 2 W and compliance with RoHS standards, this transistor is suitable for various high-performance circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.