NJVMJD31CT4G
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- NPN Polarity for Versatile Applications
- Max Collector Current of 3A
- Collector Emitter Breakdown Voltage of 100V
- Transition Frequency of 3MHz
- Power Dissipation up to 1.56W
- Lead-Free & RoHS Compliant
The onsemi Power Bipolar Transistor is a robust NPN silicon device designed for high-performance applications requiring reliable switching and amplification. With a maximum collector current of 3A and a collector emitter breakdown voltage of 100V, this transistor is ideal for various electronic circuits. Packaged in a DPAK format, it ensures efficient thermal management and ease of integration into your designs. This component is suitable for a wide range of applications, from power management to signal processing.
This power bipolar transistor is used in various electronic circuits for switching and amplification applications. With a maximum collector current of 3A and a breakdown voltage of 100V, it is ideal for power management tasks in consumer electronics, automotive systems, and industrial applications. Engineers and designers preferentially choose it for its reliability and compact DPAK packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.