BCP56-16T1G
- Description
- Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1 A, 1.5 W, SOT-223, Surface Mount
- Collector Emitter Saturation Voltage
- 500mV
- Collector Emitter Voltage (VCEO)
- 80V
- Transition Frequency
- 130MHz
- hFE Min
- 25
- Datasheet
Quantity
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- General Purpose NPN Configuration
- Collector Emitter Breakdown Voltage: 80 V
- Max Collector Current: 1 A
- Transition Frequency: 130 MHz
- Power Dissipation: 1.5 W
- Compact SOT-223 Package
The onsemi NPN Bipolar (BJT) Single Transistor is a versatile general-purpose transistor designed for a wide range of applications. With a maximum collector current of 1 A and a collector emitter breakdown voltage of 80 V, this transistor is ideal for switching and amplification tasks. Packaged in a compact SOT-223 surface mount configuration, it ensures efficient space utilization in electronic designs while maintaining high performance across various operating conditions.
The Bipolar (BJT) Single Transistor is commonly used in general-purpose switching and amplification applications. With its NPN configuration and ability to handle up to 1 A of collector current, it is ideal for driving loads in electronic circuits. Engineers and designers in various industries utilize this component for its reliability and high-frequency capability, making it suitable for both consumer electronics and industrial applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.