BC847CLT1G
- Description
- Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 300 mW, SOT-23, Surface Mount
- Collector Emitter Saturation Voltage
- 600mV
- Collector Emitter Voltage (VCEO)
- 45V
- Transition Frequency
- 100MHz
- hFE Min
- 420
- Datasheet
Quantity
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- General-purpose NPN BJT, single element
- 45V VCEO, 50V VCBO, 100mA max collector current
- 300mW power dissipation, hFE from 420 (C grade)
- 100M Hz transition frequency
- SOT-23 package, -55C to 150C, RoHS-compliant
The onsemi BC847CLT1G is a general-purpose NPN bipolar junction transistor (BJT) in a SOT-23 surface-mount package, rated for 45V collector-emitter (VCEO) and 100mA collector current with 300mW power dissipation. It is a high-gain C-grade device (hFE from 420) with a 100M Hz transition frequency, and is active and RoHS-compliant.
A general-purpose NPN transistor such as the BC847CLT1G is used for small-signal amplification and switching in a wide range of circuits. Typical applications include signal amplification, logic-level switching, LED and relay driving, and biasing stages in consumer, industrial and communications electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.