BC847CLT1G
- Description
- Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 300 mW, SOT-23, Surface Mount
- Collector Emitter Saturation Voltage
- 600mV
- Collector Emitter Voltage (VCEO)
- 45V
- Transition Frequency
- 100MHz
- hFE Min
- 420
- Datasheet
Quantity
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- NPN Polarity for Versatile Applications
- Max Collector Current of 100mA
- Collector Emitter Breakdown Voltage of 45V
- High Transition Frequency of 100MHz
- Compact SOT-23 Package for Space Efficiency
- Lead-Free & RoHS Compliant
The ON Semi BC847CLT1G is a versatile NPN bipolar transistor designed for a variety of electronic applications. With a maximum collector current of 100mA and a collector emitter breakdown voltage of 45V, this transistor is ideal for low-power switching and amplification tasks. Packaged in a compact 3-pin SOT-23 configuration, it ensures efficient space utilization in circuit designs. The BC847CLT1G operates effectively at high frequencies up to 100MHz, making it suitable for RF applications and signal processing.
The ON Semi BC847CLT1G is commonly used in low-power amplifier and switching applications due to its NPN configuration and suitability for a variety of electronic circuits. With a collector current of 100mA and a breakdown voltage of 45V, it is ideal for signal processing in consumer electronics and communication devices. Engineers and hobbyists frequently adopt this transistor for projects requiring reliability and efficient performance in compact designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.