SBC846BLT1G
- Description
- ON Semi SBC846BLT1G NPN Bipolar Transistor; 0.1 A; 65 V; 3-Pin SOT-23
- Collector Emitter Saturation Voltage
- 600mV
- Collector Emitter Voltage (VCEO)
- 65V
- Transition Frequency
- 100MHz
- Datasheet
Quantity
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- Compact 3-Pin SOT-23 Package
- Collector Emitter Breakdown Voltage: 65V
- Max Collector Current: 100mA
- Transition Frequency: 100MHz
- Power Dissipation: 300mW
- Lead-Free & RoHS Compliant
The ON Semi SBC846BLT1G is a versatile NPN bipolar transistor designed for a variety of electronic applications. With a maximum collector current of 100mA and a collector emitter breakdown voltage of 65V, this transistor is ideal for switching and amplification tasks. Packaged in a compact 3-pin SOT-23 configuration, it ensures efficient space utilization in circuit designs. The SBC846BLT1G operates effectively across a wide temperature range, making it suitable for demanding environments.
The ON Semi SBC846BLT1G is commonly used in low-power amplification and switching applications, particularly in consumer electronics and signal processing. With a maximum collector current of 100mA and transition frequency of 100MHz, it is suitable for RF and audio applications. It is often utilized by engineers and designers who require compact and efficient NPN transistors for their circuit designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.