SBC856BLT1G
- Description
- PNP Bipolar Transistor, 0.1 A, 65 V, 3-PIN SOT-23
- Collector Emitter Saturation Voltage
- -650mV
- Collector Emitter Voltage (VCEO)
- 65V
- Continuous Collector Current
- 100mA
- Transition Frequency
- 100MHz
- hFE Min
- 220
- Datasheet
Quantity
168,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Maximum Collector Current: 100 mA
- Collector Emitter Breakdown Voltage: 65 V
- Transition Frequency: 100 MHz
- Compact 3-PIN SOT-23 Package
- Power Dissipation: 300 mW
- Operating Temperature Range: -55°C to 150°C
The onsemi PNP Bipolar Transistor is a versatile and efficient component designed for a variety of electronic applications. With a maximum collector current of 100 mA and a collector emitter breakdown voltage of 65 V, this transistor is ideal for switching and amplification tasks. Housed in a compact 3-PIN SOT-23 package, it offers excellent performance with a transition frequency of 100 MHz, making it suitable for high-speed applications. This lead-free device is compliant with RoHS standards and is packaged for easy integration into your designs.
The PNP Bipolar Transistor from onsemi is designed for general-purpose amplification and switching applications. With a maximum collector current of 100 mA and a breakdown voltage of 65 V, it is suitable for audio and signal processing in consumer electronics. Engineers and designers in the electronics industry commonly use this component for its reliable performance and compact SOT-23 package.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
168,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.