SMUN5211T1G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Collector Emitter Voltage (VCEO)
50V
Continuous Collector Current
100mA
hFE Min
35
Datasheet
onsemi SMUN5211T1G product image

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  • NPN Polarity for Versatile Applications
  • Compact SC-70 Surface Mount Package
  • Max Collector Current: 100mA
  • Collector Emitter Breakdown Voltage: 50V
  • Power Dissipation: 202mW
  • Halogen Free and Lead Free Compliance

The onsemi Small Signal Bipolar Transistor NPN is designed for efficient switching and amplification in a variety of electronic applications. With a maximum collector current of 100mA and a collector emitter breakdown voltage of 50V, this transistor is ideal for low-power circuits. Housed in a compact SC-70 package, it offers excellent thermal performance with a maximum operating temperature of 150°C, making it suitable for demanding environments.

The Small Signal Bipolar Transistor from onsemi is commonly used in amplifying or switching applications in electronic circuits. With a maximum collector current of 100mA and collector emitter breakdown voltage of 50V, it is suitable for various low-power tasks. It is widely utilized by electronics engineers and hobbyists in designing compact and efficient circuits.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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