SMUN5312DW1T1G
- Description
- SMUN5312DW1T1 Series 50 V 100 mA NPN/PNP Complementary Bias Resistor Transistor
- Collector Emitter Saturation Voltage
- 250mV
- Collector Emitter Voltage (VCEO)
- 50V
- Continuous Collector Current
- 100mA
- Transition Frequency
- -
- hFE Min
- 60
- Datasheet
Quantity
120,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual complementary NPN + PNP bias resistor transistor
- 50 V collector-emitter voltage
- 100 mA continuous collector current
- Integrated bias resistors (pre-biased)
- 256 mW max power dissipation
- 6-pin SOT-363 package, AEC-Q101 rated
The onsemi SMUN5312DW1T1G is a dual complementary (NPN + PNP) pre-biased bias resistor transistor rated at 50 V and 100 mA per element. Its integrated bias resistors simplify digital switching by reducing external component count. It is housed in a 6-pin SOT-363 package.
This pre-biased digital transistor is used for logic-level switching, inverter, and interface stages where the built-in bias resistors save board space and part count. The complementary NPN/PNP pair suits driving LEDs, relays, and small loads, and level-shifting between logic domains. Its compact SOT-363 package and AEC-Q101 rating make it suitable for dense consumer, industrial, and automotive-grade boards.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
120,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.