MMBTA06LT1G

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- NPN Polarity for Versatile Applications
- Collector Emitter Breakdown Voltage of 80V
- Max Collector Current Rating of 500mA
- Transition Frequency of 100MHz for Fast Switching
- Compact SOT-23 Package for Space Efficiency
The onsemi NPN Bipolar Transistor is designed for high-efficiency driver applications, featuring a robust collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA. This compact transistor is housed in a SOT-23 package, making it ideal for space-constrained designs. With a transition frequency of 100MHz, it ensures fast switching capabilities, making it suitable for a variety of electronic circuits.
The NPN Bipolar Transistor is commonly used as a driver in various electronic circuits, providing reliable switching and amplification capabilities. With a collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA, it is ideal for applications such as signal processing and power management. Engineers and designers in telecommunications and consumer electronics frequently utilize this component for its efficiency and versatility.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.