MPN
MMBT3904LT1G
Manufacturer
Description
Transistor, Bipolar, Si, NPN, General Purpose, VCEO 40VDC, IC 200mA, PD 225mW, SOT-23
MPN
MMBT3904LT1G
Total Available Quantity
-
Main Attributes
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
hFE Min
100
Transition Frequency
300MHz
Max Junction Temperature (Tj)
150°C
Specifications
Series
MMBT3904L
Lifecycle Status
Production
Case/Package
SOT-23
Number of Pins
3
Packaging
Tape & Reel
Package Quantity
3,000
Polarity
NPN
Max Collector Current
200mA
Collector Emitter Breakdown Voltage
40V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
Power Dissipation
225mW
Frequency
300MHz
Number of Elements
1
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
RoHS
Compliant
Contact Plating
Tin
Current Rating
200mA
ECCN
EAR99
Element Configuration
Single
Height
940µm
HTS
8541.21.0075
Lead Free
Lead Free
Length
2.9mm
Manufacturer Lifecycle Status
Production
Max Breakdown Voltage
40V
Max Frequency
300MHz
Max Power Dissipation
300mW
Radiation Hardening
No
REACH SVHC
No
Schedule B
8541210080
Voltage Rating (DC)
40V
Width
1.3mm
About This Product
The onsemi MMBT3904L is a versatile NPN bipolar transistor designed for general-purpose applications. With a compact SOT-23 package, this transistor delivers reliable performance in various electronic circuits. It features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, making it suitable for a wide range of switching and amplification tasks. The MMBT3904L operates efficiently at high frequencies up to 300MHz, ensuring optimal signal integrity in demanding environments.
MPN
MMBT3904LT1G
Total Available Quantity
-
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