MMBT3904LT1G
- Description
- Transistor, Bipolar, Si, NPN, General Purpose, Vceo 40VDC, IC 200MA, Pd 225MW, SOT-23
- Collector Emitter Saturation Voltage
- 200mV
- Collector Emitter Voltage (VCEO)
- 40V
- Transition Frequency
- 300MHz
- hFE Min
- 100
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- General-purpose NPN BJT, single element
- 40V VCEO, 60V VCBO, 200mA max collector current
- 225mW power dissipation, hFE from 100
- 300M Hz transition frequency
- SOT-23 package, -55C to 150C, RoHS-compliant
The onsemi MMBT3904LT1G is a general-purpose NPN bipolar junction transistor (BJT) in a SOT-23 surface-mount package, rated for 40V collector-emitter (VCEO) and 200mA collector current with 225mW power dissipation. It offers a 300M Hz transition frequency and a minimum hFE of 100, and is active and RoHS-compliant.
The MMBT3904LT1G is a classic general-purpose NPN transistor used for small-signal switching and amplification. Typical applications include logic-level and load switching, LED and relay driving, signal buffering and biasing in a broad range of consumer, industrial and communications circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.