BC846BLT1G
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- Collector Emitter Breakdown Voltage 65V
- Max Collector Current 100mA
- Transition Frequency 100MHz
- Power Dissipation 300mW
- Compact SOT-23 Package
The onsemi NPN Bipolar Transistor is a versatile general-purpose component designed for a wide range of electronic applications. With a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA, this transistor is ideal for switching and amplification tasks. Packaged in a compact SOT-23 form factor, it ensures efficient space utilization in your designs while delivering reliable performance across various operating conditions.
The Transistor, Bipolar, Si, NPN is designed for general-purpose applications where small signal amplification is required. It operates with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. Typically used in low-power switching and amplification circuits, this small signal transistor is packaged in a SOT-23 case, making it suitable for compact electronic designs. Its specifications allow for high-frequency applications, with a transition frequency of 100MHz and power dissipation of up to 300mW, ensuring efficient performance in various electronic devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.