MMBT5401LT1G
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- High Voltage Rating: -150V
- Max Collector Current: 500mA
- Transition Frequency: 300MHz
- Compact SOT-23 Package
- Power Dissipation: 300mW
The onsemi PNP High Voltage Bipolar Transistor is designed for high-performance applications requiring robust voltage handling and efficient current management. With a collector emitter breakdown voltage of -150V and a maximum collector current of 500mA, this transistor is ideal for various electronic circuits. Packaged in a compact SOT-23 form factor, it ensures reliable operation in demanding environments while maintaining a high transition frequency of 300MHz.
This PNP bipolar transistor is commonly used in high voltage applications and signal amplifications where low power dissipation is critical. With a collector-emitter breakdown voltage of -150V and a maximum collector current of 500mA, it is suitable for various electronic circuits involving switching and amplification. Engineers and designers in the electronics industry utilize this component for efficient performance in consumer electronics and communication devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.