HGT1S10N120BNST
- Description
- Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
- Max Power Dissipation
- 298W
- Collector Emitter Saturation Voltage
- 4.2V
- Collector Emitter Voltage (VCEO)
- 1.2kV
- Continuous Collector Current
- 35A
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
20,800 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- High Voltage Rating: 1.2kV
- Max Collector Current: 35A
- Power Dissipation: 298W
- Fast Switching Times: Turn-On Delay 23ns Turn-Off Delay 165ns
- Wide Operating Temperature Range: -55°C to 150°C
- Lead-Free & RoHS Compliant
The onsemi Trans IGBT Chip N=-CH is a powerful and efficient electronic component designed for high voltage applications. With a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 35A, this IGBT chip is ideal for demanding power management tasks. Housed in a D2PAK package, it offers excellent thermal performance and reliability, making it suitable for various industrial applications.
The Trans IGBT Chip is commonly used in high-power applications such as motor drives, power inverters, and industrial equipment due to its high voltage and current handling capabilities. With a maximum collector-emitter voltage of 1200V and a continuous collector current of 35A, it is ideal for energy-efficient designs. Engineers and designers in the automotive and industrial sectors frequently utilize this component to enhance performance and reliability in their power electronic systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
20,800 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.