HGT1S10N120BNST
- High Voltage Rating: 1.2kV
- Max Collector Current: 35A
- Power Dissipation: 298W
- Fast Switching Times: Turn-On Delay 23ns Turn-Off Delay 165ns
- Wide Operating Temperature Range: -55°C to 150°C
- Lead-Free & RoHS Compliant
The onsemi Trans IGBT Chip N=-CH is a powerful and efficient electronic component designed for high voltage applications. With a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 35A, this IGBT chip is ideal for demanding power management tasks. Housed in a D2PAK package, it offers excellent thermal performance and reliability, making it suitable for various industrial applications.
The Trans IGBT Chip is commonly used in high-power applications such as motor drives, power inverters, and industrial equipment due to its high voltage and current handling capabilities. With a maximum collector-emitter voltage of 1200V and a continuous collector current of 35A, it is ideal for energy-efficient designs. Engineers and designers in the automotive and industrial sectors frequently utilize this component to enhance performance and reliability in their power electronic systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.