MMBFJ177LT1G

Description
MMBFJ177LT1G P-channel JFET Transistor; Idss 1.5 - 20mA; 3-Pin SOT-23
Gate to Source Voltage (Vgs)
25V
Drain to Source Voltage (Vdss)
25V
Drain to Source Resistance
300O
Continuous Drain Current (ID)
20mA
Input Capacitance
11pF
Max Junction Temperature (Tj)
150°C
Datasheet
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  • Compact 3-Pin SOT-23 Package
  • Continuous Drain Current up to 20mA
  • Drain to Source Voltage Rating of 25V
  • Low Drain to Source Resistance of 300Ω
  • Input Capacitance of 11pF
  • Lead-Free & RoHS Compliant

The onsemi MMBFJ177LT1G is a high-performance P-channel JFET transistor designed for a variety of electronic applications. With its compact 3-pin SOT-23 package, this transistor offers excellent electrical characteristics and reliability. It operates efficiently with a continuous drain current of up to 20mA and a maximum drain to source voltage of 25V, making it suitable for low-power switching and amplification tasks. The MMBFJ177LT1G is an ideal choice for engineers seeking a robust and versatile component for their designs.

The MMBFJ177LT1G is a P-channel JFET transistor commonly used in analog switching and amplifier applications. Its key capabilities include low noise and high input impedance, making it ideal for use in audio equipment, signal processing, and RF circuits. Engineers and hobbyists utilize this component for its reliability in various electronic projects and designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
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