PMDPB58UPE,115
- Description
- Transistor MOSFET Array Dual P-CH 20V 4.5A 8-Pin DFN2020-6 T/R
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- -20V
- Continuous Drain Current (ID)
- 3.6A
- Drain to Source Resistance
- 58mΩ
- Input Capacitance
- 804pF
- Datasheet
Quantity
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- Max Drain to Source Voltage: -20V
- Continuous Drain Current: 3.6A
- Low Rds On Max: 67mΩ
- Fast Switching Times: Rise Time 15ns Fall Time 14ns
- Wide Operating Temperature Range: -55°C to 150°C
The Nexperia Transistor MOSFET Array Dual P-CH is a high-performance solution designed for efficient power management in various electronic applications. With a compact 8-Pin DFN2020-6 package, this MOSFET array operates at a maximum drain to source voltage of -20V and supports continuous drain currents up to 3.6A. Its low on-resistance and fast switching times make it ideal for applications requiring high efficiency and reliability.
The Transistor MOSFET Array is commonly used in power management applications, including motor control and switching circuits. Its dual P-Channel configuration allows for efficient control of load switching with a maximum drain current of 3.6A and low on-resistance. Engineers and designers in the electronics industry often utilize this component for compact and reliable circuit designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.