2N7002BK,215
- Description
- MOSFET, N-Channel, 60V, 1OHM, 350mA, TO-263AB-3; Transistor Polarity: N-Channel; Conti
- Continuous Drain Current (ID)
- 350mA
- Drain to Source Resistance
- 1.6Ω
- Datasheet
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- N Channel Configuration for Enhanced Performance
- Voltage Rating: 60V
- Drain to Source Resistance: 1Ω
- Continuous Current Rating: 350mA
- TO-263AB-3 Package for Efficient Heat Dissipation
- Tape & Reel Packaging for Easy Handling
The Nexperia N Channel MOSFET is designed for high-efficiency switching applications, offering a maximum voltage rating of 60V and a low drain to source resistance of 1Ω. This component is ideal for various electronic circuits requiring reliable performance and compact design. Packaged in a TO-263AB-3 format, it ensures easy integration into your projects while maintaining optimal thermal management. With a continuous current rating of 350mA, this MOSFET is suitable for a wide range of applications.
This N-channel MOSFET is commonly used in low-voltage switching applications and can handle up to 350mA of continuous current. Key capabilities include low drain-to-source resistance of 1 ohm, making it suitable for efficient power management in various electronic devices. It is typically utilized in consumer electronics, industrial equipment, and automotive applications where compact size and high performance are required.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.