BUK9875-100A/CUX
- Description
- Power MOSFET, N-Channel, 100 V, 7 A, 0.072 ohm, SOT-223, Surface Mount
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 7A
- Drain to Source Resistance
- 84mΩ
- Input Capacitance
- 1.69nF
- Datasheet
Quantity
72,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Maximum Drain to Source Voltage: 100 V
- Continuous Drain Current: 7 A
- Low On-Resistance: 72 mΩ
- Compact SOT-223 Package
- Wide Operating Temperature Range: -55°C to 150°C
The Nexperia Power MOSFET N-Channel is a high-performance electronic component designed for efficient power management in various applications. With a maximum drain to source voltage of 100 V and a continuous drain current of 7 A, this MOSFET ensures reliable operation in demanding environments. Packaged in a compact SOT-223 format, it is ideal for surface mount applications, providing excellent thermal performance and low on-resistance characteristics.
The Power MOSFET, N-Channel, is commonly used in power conversion applications, including DC-DC converters and motor control circuits. With its low on-resistance and high continuous drain current capability, it is ideal for efficient switching in consumer electronics and industrial equipment. Engineers and designers in the electronics industry utilize this component for its reliable performance and compact surface mount packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
72,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.