2N7002P,215
- Description
- Transistor: N-MOSFET; unipolar; 60V; 360mA; 1.6ohm; 350mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
- Drain to Source Resistance
- 1O
- Datasheet
Quantity
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- Voltage Rating: 60V
- Current Rating: 360mA
- Drain to Source Resistance: 1.6Ω
- Power Dissipation: 350mW
- Temperature Range: -55 to 150 deg.C
- Packaging: Tape & Reel
The Nexperia N-MOSFET transistor is a high-performance unipolar device designed for efficient switching applications. With a voltage rating of 60V and a current capacity of 360mA, this transistor is ideal for various electronic circuits requiring reliable performance. Its low drain to source resistance of 1.6Ω ensures minimal power loss, making it suitable for energy-efficient designs. Packaged in a compact SOT23 format, it is perfect for surface mount technology and is compliant with AEC-Q100 standards, ensuring quality and reliability in automotive applications.
This N-MOSFET transistor is commonly used in switching and amplifying applications within electronic circuits. With a voltage rating of 60V and a current capacity of 360mA, it is ideal for automotive and industrial applications requiring reliable performance under various temperature conditions. Engineers and designers integrate this component into power management systems, motor drivers, and signal processing devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.