A2T27S020GNR1
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- Frequency Range: 400 to 2700 MHz
- Average Output Power: 2.5 W
- Voltage Rating: 28 V
- High Efficiency for RF Applications
The NXP Semiconductors Airfast RF Power LDMOS Transistor is designed for high-frequency applications ranging from 400 to 2700 MHz. With an average output power of 2.5 W and a voltage rating of 28 V, this transistor delivers exceptional performance for RF amplification needs. Its robust design ensures reliability in demanding environments, making it an ideal choice for various communication systems.
The Airfast RF Power LDMOS Transistor is designed for use in high-frequency applications, especially in RF amplification for communications and broadcasting. It supports a wide frequency range from 400 to 2700 MHz, making it suitable for various wireless standards. Engineers and developers in telecommunications and RF design extensively use this transistor for enhancing signal strength in systems requiring reliable performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.