A3T21H360W23SR6

Description
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V, ACP-1230S-4L2S, RoHS
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  • Frequency Range: 2110-2200 MHz
  • Average Power Output: 56 W
  • Supply Voltage: 28 V
  • Lead-Free & RoHS Compliant

The NXP Semiconductors Airfast RF Power LDMOS Transistor ACP-1230S-4L2S is designed for high-efficiency RF amplification in the 2110-2200 MHz frequency range. With a robust average power output of 56 W and a supply voltage of 28 V, this transistor is ideal for various communication applications. Its advanced LDMOS technology ensures superior performance and reliability, making it a preferred choice for modern RF systems.

The Airfast RF Power LDMOS Transistor is designed for high-power amplifications in the 2110-2200 MHz frequency range, suitable for cellular and wireless communication applications. With a power output of 56 W average and a voltage of 28 V, it is ideal for use in base station transmitters and other RF systems. Engineers and designers in the telecommunications industry commonly utilize this transistor for its high efficiency and reliable performance.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
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