Discrete Semiconductors

Transistors

Semiconductors

RF Transistors

NXP Semiconductors

Mount

Gate to Source Voltage (Vgs)

Contact Plating

Current Rating

Max Operating Temperature

Min Operating Temperature

Packaging

Schedule B

RoHS

F Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811|Rf Fet, 65V, 728Mhz-3600Mhz, Pld-1.5W; Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating 

Diode - 4 Pin - PowerFET

Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V

AFT27S010NT1