AFT27S010NT1
- Description
- RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
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- Single-element N-channel RF power MOSFET (LDMOS)
- Output power of 1.26W
- Gate-source voltage (Vgs) of 10V
- Characterized at 28V test voltage and 90mA test current
- High maximum operating temperature of 225C
- Surface-mount, supplied on tape and reel, RoHS compliant
The NXP Semiconductors AFT27S010NT1 is a single-element N-channel RF power MOSFET (LDMOS) supplied in a surface-mount package on tape and reel. It delivers an output power of 1.26W and is characterized at a 28V test voltage with a 90mA test current. The device is RoHS compliant and rated for operation up to a maximum temperature of 225C.
The NXP Semiconductors AFT27S010NT1 is used for radio-frequency power amplification in wireless and RF systems. RF power MOSFETs of this type are applied in transmitter output stages and signal amplification for communications and broadcast equipment. It is typically specified by RF engineers designing power amplifier circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.