AFT09MS031NR1
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- Wide Frequency Range: 764-941 MHz
- Maximum Power Dissipation: 31 W
- Surface Mount Design for Easy Integration
- Robust Operating Temperature Range (-40°C to 150°C)
- TO-270 Package for Compact Footprint
- RoHS Compliant and REACH SVHC Unaffected
The NXP Semiconductors Airfast Wideband RF Power LDMOS Transistor is a cutting-edge solution designed for high-frequency applications ranging from 764 to 941 MHz. With a maximum power output of 31 W and a robust operating voltage of 13.6 V, this surface mount transistor is ideal for various RF amplification needs. Encased in a TO-270 package, it ensures reliable performance even in demanding environments, with an impressive operating temperature range from -40°C to 150°C. This transistor is a perfect choice for engineers looking to enhance their RF systems with efficient and powerful components.
The Airfast Wideband RF Power LDMOS Transistor is designed for RF amplification in communication systems operating within the 764-941 MHz range. It is suitable for applications such as wireless infrastructure, broadcast, and specialty RF applications. Engineers and designers utilize this component for its high power output and efficiency in delivering reliable performance in various RF circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.