MRF1513NT1
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- High Frequency Operation up to 520 MHz
- Power Output of 3 W
- Drain to Source Voltage Vdss: 40 V
- Continuous Drain Current ID: 2 A
- Max Operating Temperature: 150°C
- Packaging: Tape & Reel
The NXP Semiconductors Lateral N-Channel Broadband RF Power MOSFET is designed for high-frequency applications up to 520 MHz, delivering a power output of 3 W at a voltage of 12.5 V. This component is ideal for RF amplification in various communication systems, providing reliable performance in demanding environments. With its surface mount design, it ensures efficient space utilization and ease of integration into your electronic projects.
This RF power MOSFET is commonly used in broadband communication systems, amplifiers, and RF applications that require efficient power handling and high frequencies up to 520 MHz. Key capabilities include a continuous drain current of 2A and robust power dissipation of 31.25W, making it suitable for demanding RF environments. Engineers and designers in the telecommunications and electronic manufacturing sectors typically utilize this component for reliable signal amplification and processing.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.