A3T18H400W23SR6
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- Frequency Range: 1805-1880 MHz
- Average Output Power: 71 W
- High Efficiency for Enhanced Performance
- Robust Thermal Management Design
The NXP Semiconductors RF MOSFET Transistors Airfast RF Power LDMOS Transistor is designed for high-efficiency RF power amplification in the frequency range of 1805-1880 MHz. With an average output power of 71 W, this transistor is ideal for various communication applications, providing reliable performance and superior thermal management. Its robust construction ensures durability and longevity in demanding environments, making it a preferred choice for RF engineers and system designers.
This RF MOSFET transistor is designed for high-power applications in the frequency range of 1805-1880 MHz, commonly used in cellular base stations and advanced wireless communication systems. Its key capabilities include high efficiency and robustness, making it suitable for demanding RF amplification tasks. Engineers and developers in telecommunications utilize this component to enhance signal strength and performance in their designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.