AFT27S006NT1
- Description
- RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2
- Gate to Source Voltage (Vgs)
- 10V
- Datasheet
Quantity
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- Frequency Range: 0.10 to 3.6 GHz
- Typical Gain: 22.5 dB at 2170 MHz
- Power Output: 6 W
- Gate to Source Voltage (Vgs): 10 V
- Max Operating Temperature: 225°C
- Lead Free and RoHS Compliant
The NXP Semiconductors RF Power Transistor is designed for high-frequency applications ranging from 0.10 to 3.6 GHz, delivering a typical gain of 22.5 dB at 2170 MHz. With a power output of 6 W and a robust LDMOS technology, this transistor is ideal for RF amplification in various communication systems. Its surface mount design in a SOT1811-2 package ensures efficient integration into compact circuit layouts, making it a reliable choice for modern electronic applications.
The RF Power Transistor from NXP Semiconductors is designed for high-frequency applications, operating from 0.10 to 3.6 GHz with a typical gain of 22.5 dB at 2170 MHz. It is used in RF amplification and transmission, ideal for telecommunications and broadcasting equipment. Engineers and designers in the RF industry utilize this transistor for efficient signal processing in various applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.