MRFE6S9060NR1
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- High Frequency Operation up to 880 MHz
- Average Power Output of 14 W
- Surface Mount TO-270 Package
- Wide Operating Temperature Range: -65°C to 225°C
- Lead-Free & RoHS Compliant
The NXP Semiconductors Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET is designed for high-frequency applications up to 880 MHz, delivering an average power output of 14 W. This robust component is ideal for RF amplification in communication systems, ensuring reliable performance in demanding environments. Packaged in a TO-270 surface mount case, it offers a compact solution for space-constrained designs while maintaining excellent thermal stability across a wide temperature range.
This power MOSFET is commonly used in RF amplification applications, particularly in wireless communication systems such as CDMA technology. Its high power handling capability and broad frequency range make it suitable for mobile base stations and other RF transmission systems. Engineers and developers in the telecommunications field typically utilize this component for its efficiency and reliable performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.