MRFX1K80NR5
- Description
- Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V, FM4F, RoHS
- Datasheet
Quantity
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- High Power Output: 1800 W CW
- Wide Frequency Range: 1.8 to 400 MHz
- 65 V Operating Voltage
- RoHS Compliant for Environmental Safety
The NXP Semiconductors Wideband RF Power LDMOS Transistor is a cutting-edge solution designed for high-power applications requiring exceptional performance across a broad frequency range. With a power output of 1800 W CW and operational capabilities spanning from 1.8 to 400 MHz, this transistor is ideal for various RF amplification needs. Operating at 65 V and compliant with RoHS standards, it ensures both efficiency and environmental responsibility, making it a reliable choice for modern RF systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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