2V7002LT1G
- Description
- Trans MOSFET N-ch 60V 0.115A Automotive 3-PIN SOT-23 T/r / MOSFET N-ch 60V 0.115A SOT-23-3
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 115mA
- Drain to Source Resistance
- 7.5O
- Input Capacitance
- 50pF
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Continuous Drain Current: 115mA
- Maximum Drain to Source Breakdown Voltage: 60V
- Threshold Voltage: 1V
- Low Rds On Max: 7.5Ω
- Compact 3-Pin SOT-23 Package
- Lead-Free & RoHS Compliant
The onsemi 2V7002LT1G is a high-performance N-channel MOSFET transistor designed for efficient switching applications. With a compact 3-pin SOT-23 package, this transistor delivers reliable performance in a variety of electronic circuits. It features a continuous drain current of 115mA and a maximum drain to source breakdown voltage of 60V, making it suitable for low to medium power applications. The device operates effectively across a wide temperature range, ensuring stability and reliability in demanding environments.
The 2V7002LT1G N-channel MOSFET transistor is designed for low-power switching applications and signal amplification in a variety of electronic devices. With a compact SOT-23 package, it is suitable for use in space-constrained environments, making it ideal for consumer electronics, automotive applications, and battery management systems. Engineers and designers utilize this MOSFET for its reliable performance, efficiency, and ability to handle up to 115mA of continuous drain current.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.