FDME1024NZT
- Description
- Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 3.8A
- Drain to Source Resistance
- 66mΩ
- Input Capacitance
- 300pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
2,998 AvailableNeed this part?
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Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
- Dual N-channel Power Trench MOSFET
- 20V drain-to-source voltage (Vdss)
- 3.8A continuous drain current
- 66m Ohm maximum on-resistance (Rds(on))
- 700mV threshold, 8V Vgs
- 6-pin UFDFN package, -55°C to 150°C
The onsemi FDME1024NZT is a dual N-channel Power Trench MOSFET in a 6-pin UFDFN package. Each channel is rated for 20V drain-to-source (Vdss), 3.8A continuous drain current, and 66m Ohm on-resistance, with an 8V gate-source rating and a 700mV threshold voltage.
Low-voltage dual N-channel MOSFETs like the FDME1024NZT handle load switching, power management, and DC/DC conversion in compact electronics. The low 66m Ohm on-resistance and small UFDFN footprint suit space-constrained portable and computing designs. Board and power designers are the typical users.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
2,998 AvailableNeed this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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