FDME1024NZT
- Surface Mount Design for Easy Integration
- Maximum Drain to Source Voltage of 20V
- Continuous Drain Current Rating of 3.8A
- Low Rds On Max of 66mO for Enhanced Efficiency
- Fast Switching Times with Rise Time of 2ns
- Compact 6-Pin MicroFET Package
The onsemi Dual N-CH MOSFET Array is a versatile and efficient electronic component designed for high-performance applications. With a compact 6-pin MicroFET package, this MOSFET array is ideal for surface mount technology, providing reliable operation in various electronic circuits. It features a maximum drain to source voltage of 20V and a continuous drain current of 3.8A, making it suitable for demanding power management tasks.
The Transistor MOSFET Array Dual N-CH 20V 3.8A 6-Pin MicroFET T/R is a powerful electronic component designed for applications requiring dual N-channel power trench MOSFET functionality. With a low on-resistance of 66mO and a maximum drain-to-source voltage of 20V, this transistor array is ideal for use in various electronic circuits where efficient power handling is essential. Its compact size and surface mount design make it suitable for PCB integration, offering reliable performance in a range of operating temperatures from -55°C to 150°C. Whether used in power management systems, switching regulators, or motor control applications, this transistor array ensures high efficiency and dependable operation.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.