MTP23P06V

Description
MOSFETs- Power and Small Signal 60V 23A P-Channel
Gate to Source Voltage (Vgs)
15V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
23A
Drain to Source Resistance
120mO
Input Capacitance
1.62nF
Datasheet
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  • Drain to Source Voltage (Vdss):60V
  • Continuous Drain Current (ID):23A
  • Low On-Resistance (Rds On Max):120mO
  • High Power Dissipation:90W
  • Wide Operating Temperature Range:-40°C to 175°C
  • Fast Switching Times:Rise Time 98.3ns, Fall Time 62ns
  • 3-Pin TO-220AB Package for Through Hole Mounting
  • RoHS Compliant and Lead Containing

The On Semiconductor 60V 23A P-Channel MOSFET is a robust and efficient electronic component designed for power management and small signal applications. Encased in a TO-220AB package, this MOSFET offers exceptional performance with a maximum drain-to-source voltage of 60V and a continuous drain current rating of 23A. With its low on-resistance and high power dissipation capabilities, this device is ideal for demanding applications requiring reliable switching and amplification. Please note that this product is currently at the end of its lifecycle (EOL).

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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