FDS86240
- Description
- N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 150V
- Continuous Drain Current (ID)
- 7.5A
- Drain to Source Resistance
- 17.3mO
- Input Capacitance
- 2.57nF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- High Voltage Rating: 150V
- Low On-Resistance: 19.8mΩ
- Fast Switching Times: Rise Time 10ns Fall Time 10ns
- Wide Temperature Range: -55°C to 150°C
- Compact SOIC Package with 8 Pins
The onsemi N-Channel PowerTrench® MOSFET is designed for high-efficiency power management applications, offering exceptional performance in a compact SOIC package. With a maximum drain to source voltage of 150V and a continuous drain current of 7.5A, this MOSFET is ideal for various electronic circuits requiring reliable switching and low on-resistance. Its robust design ensures optimal thermal performance, making it suitable for demanding environments.
The N-Channel PowerTrench® MOSFET is designed for high-efficiency switching applications, commonly used in power management circuits and motor control. With a low on-resistance and high breakdown voltage, it provides optimal performance for consumer electronics and industrial applications. Engineers and designers in electronics development choose this MOSFET for its reliability and compact size.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.