FDMS86182
- Description
- N-Channel Shielded Gate PowerTrench® MOSFET 100V, 78A, 7.2mΩ
- Drain to Source Resistance
- 5.9mO
- Datasheet
Quantity
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- High Voltage Rating: 100V
- Continuous Current Rating: 78A
- Low Drain to Source Resistance: 5.9mΩ
- Compact Surface Mount Design
- Wide Operating Temperature Range: -55°C to 150°C
- RoHS Compliant
The onsemi N-Channel Shielded Gate Power Trench® MOSFET is designed for high-efficiency power management applications, offering exceptional performance in a compact form factor. With a maximum voltage rating of 100V and a continuous current rating of 78A, this MOSFET is ideal for demanding environments. Its low drain to source resistance of 5.9mΩ ensures minimal power loss, making it a reliable choice for various electronic applications.
The N-Channel Shielded Gate Power Trench® MOSFET is commonly used in power management applications for efficient switching. With a low drain to source resistance of 5.9mΩ, it is ideal for high-performance power supplies and motor control circuits. Engineers and designers in the electronics industry utilize this component for its reliability and high thermal performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.