NTZD3154NT1G
- Description
- NTZD3154N: Small Signal MOSFET 20V 540mA 550 mOhm Dual N-Channel SOT-563 with ESD Protection
- Gate to Source Voltage (Vgs)
- 6V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 540mA
- Drain to Source Resistance
- 700mO
- Input Capacitance
- 150pF
- Datasheet
Quantity
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- Compact SOT-563 Package
- Maximum Drain to Source Voltage: 20V
- Continuous Drain Current: 540mA
- Low On-Resistance: 550mΩ
- Fast Switching Times: Rise Time 4ns Fall Time 4ns
The onsemi NTZD3154N is a versatile dual N-channel small signal MOSFET designed for efficient switching applications. With a compact SOT-563 package, this MOSFET operates at a maximum drain to source voltage of 20V and supports continuous drain currents up to 540mA. Its low on-resistance of 550mΩ ensures minimal power loss, making it an ideal choice for space-constrained designs requiring reliable performance and ESD protection.
The NTZD3154N is commonly used in small signal applications such as switching and amplifying signals. With its dual N-channel configuration, it is ideal for compact designs needing ESD protection. Typical users include electronics manufacturers and engineers looking to improve efficiency and performance in low-voltage circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.