FDD5614P
- Description
- P-Channel PowerTrench® MOSFET, 60V, -15A, 100mΩ
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- -60V
- Continuous Drain Current (ID)
- 15A
- Drain to Source Resistance
- 100mΩ
- Input Capacitance
- 759pF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
603 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Maximum Drain to Source Voltage: 60V
- Continuous Drain Current: 15A
- Low On-Resistance: 100mO
- Fast Switching Times: Rise Time 10ns Fall Time 12ns
- High Power Dissipation: 42W
The onsemi P-Channel PowerTrench® MOSFET is designed for high-efficiency power management applications. With a maximum drain to source voltage of 60V and a continuous drain current rating of 15A, this MOSFET ensures reliable performance in demanding environments. Its low on-resistance of 100mO minimizes power loss, making it an ideal choice for various electronic circuits. Packaged in a compact TO-252 surface mount configuration, this component is suitable for automated assembly processes and offers excellent thermal performance.
The P-Channel PowerTrench® MOSFET is a versatile component commonly used in power management applications. With a drain to source voltage of 60V, a continuous drain current of 15A, and a threshold voltage of 1.6V, this MOSFET is ideal for various power control and switching tasks. Whether it's in voltage regulators, DC-DC converters, or motor control circuits, this P-Channel MOSFET offers efficient performance and reliable operation.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
603 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.