NVR5198NLT1G
- Description
- Power MOSFET 60V 2.2A 155 mOhm Single N-Channel SOT-23 Logic Level
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 2.2A
- Drain to Source Resistance
- 155mO
- Input Capacitance
- 182pF
- Datasheet
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- High Drain to Source Breakdown Voltage: 60V
- Low Drain to Source Resistance: 155mΩ
- Fast Switching Performance with Rise Time: 7ns
- Logic Level Gate Drive Voltage: 20V
- Halogen Free and Lead Free Compliance
The onsemi Power MOSFET is a high-performance N-Channel device designed for efficient power management in various applications. With a maximum drain to source breakdown voltage of 60V and a continuous drain current rating of 2.2A, this MOSFET ensures reliable operation in demanding environments. Packaged in a compact SOT-23 form factor, it is ideal for space-constrained designs while providing excellent thermal performance with a maximum operating temperature of 150°C.
The Power MOSFET is commonly used in power management applications, such as switching power supplies and motor drivers. With its low on-resistance and high continuous drain current capability, it is ideal for efficient power delivery in consumer electronics and automotive systems. Engineers and designers often utilize this component for its reliable performance in high-temperature environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.