NVMFS5C673NLWFAFT1G
- Description
- Single N-Channel Power MOSFET 60V, 50A, 9.2mΩ Trench 6 60V NFET WF
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 14A
- Drain to Source Resistance
- 7.7mO
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Single N-channel trench power MOSFET
- Drain-source voltage (Vdss) of 60V
- Continuous drain current of 14A
- Low drain-source on-resistance of 7.7mohm
- Gate-source voltage (Vgs) rating of 20V
- Maximum junction temperature of 175C, RoHS compliant
The onsemi NVMFS5C673NLWFAFT1G is a single N-channel trench power MOSFET rated for a drain-source voltage (Vdss) of 60V. It offers a continuous drain current of 14A, a low drain-source on-resistance of 7.7mohm, and a 20V gate-source voltage rating. The device is production-status and RoHS compliant, with a maximum junction temperature of 175C.
The onsemi NVMFS5C673NLWFAFT1G is used for efficient load switching and power conversion where low conduction loss is important. N-channel power MOSFETs of this type are applied in DC-DC converters, motor drivers, and power-management circuits in automotive, industrial, and consumer electronics. It is typically specified by power-electronics engineers optimizing efficiency.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.