SQJA60EP-T1_GE3
- Description
- 60V, 30A, 0.0125ohm, TrenchFET Power MOSFET, N-Channel, Powerpak SO-8L, AEC-Q101
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 30A
- Drain to Source Resistance
- 10.1mO
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Continuous Drain Current: 30A
- Drain to Source Breakdown Voltage: 60V
- Drain to Source Resistance: 10.1mΩ
- Gate to Source Voltage: 20V
- Max Operating Temperature: 175°C
- Turn-On Delay Time: 9ns
The Vishay 60V, 30A, 0.0125Ω TrenchFET Power MOSFET is designed for high-efficiency power management applications. This N-Channel MOSFET features a compact Powerpak SO-8L package, making it ideal for space-constrained designs. With a robust continuous drain current rating of 30A and a breakdown voltage of 60V, it ensures reliable performance in demanding environments. The device is AEC-Q101 qualified, making it suitable for automotive applications where reliability and performance are critical.
The 60V, 30A, 0.0125ohm, TrenchFET Power MOSFET is commonly used in efficient power management applications, including DC-DC converters and motor control circuits. With a low Drain to Source Resistance and high current capabilities, it is ideal for automotive and industrial applications. Engineers and designers utilize this MOSFET to enhance system performance and thermal management in compact designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.