SI2343CDS-T1-GE3
- Description
- P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 Vishay SI2343CDS-T1-GE3
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Resistance
- 37mO
- Datasheet
Quantity
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- P-Channel MOSFET, 30V Drain-Source Voltage (Vdss)
- 37 Milliohm Drain-Source on-Resistance
- 3-Pin SOT-23 Surface-Mount Package
- -55C to 150C Operating Temperature Range
- RoHS compliant, Tape and reel, 3, 000 per Reel
The SI2343CDS-T1-GE3 from Vishay is a P-channel power MOSFET supplied in a 3-pin SOT-23 surface-mount package. Its recorded attributes give a 30V drain-source voltage and a 37 milliohm drain-source on-resistance across a -55C to 150C operating temperature range. The SI2343CDS-T1-GE3 is RoHS compliant and ships on tape and reel in quantities of 3, 000.
A 30V P-channel MOSFET with tens of milliohms of on-resistance in SOT-23 is used for high-side load switching, reverse-polarity and reverse-battery protection, power-rail sequencing and battery charge-path control in 5V, 12V and 24V systems. Because a P-channel device turns on with a gate voltage below the source, it removes the need for the bootstrap or charge-pump circuitry a high-side N-channel switch requires, at the cost of higher on-resistance for a given die area. No continuous drain current, power dissipation or gate threshold rating is recorded in this product's attributes, so confirm those against the Vishay datasheet before sizing a load.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.