SIA445EDJ-T1-GE3
- Description
- MOSFET, P-Channel, -20V, POWERPAK SC70-6; Transistor Polarity: P-Channel; Continuous D
- Gate to Source Voltage (Vgs)
- 12V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 12A
- Drain to Source Resistance
- 13.5mO
- Input Capacitance
- 2.13nF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Surface Mount Design for Easy Integration
- Continuous Drain Current of 12A
- Low Rds On Max of 16.5mΩ
- Fast Switching with Turn-On Delay Time of 25ns
- Wide Operating Temperature Range: -55°C to 150°C
The Vishay P-CH MOSFET in a POWERPAK SC70-6 package is designed for high-efficiency power management applications. With a maximum drain to source voltage of 20V and a continuous drain current of 12A, this component is ideal for various electronic circuits requiring reliable switching performance. Its compact size and robust specifications make it suitable for surface mount technology, ensuring ease of integration into modern electronic designs.
The Vishay MOSFET serves as a key component in a variety of electronic applications, including power management and switching circuits. It is commonly used in consumer electronics, automotive systems, and industrial equipment due to its high current and low voltage characteristics. Engineers favor this P-channel device for its efficient operation and compact surface mount packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.