SIS443DN-T1-GE3
- Description
- P-fet, 40V, 13.3A, 3.7W, -2.3V Vgs, 16MOHM, Powerpak 1212-8
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 35A
- Drain to Source Resistance
- 9.7mO
- Input Capacitance
- 4.37nF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Drain to Source Voltage: 40V
- Continuous Drain Current: 35A
- Low Rds On Max: 11.7mΩ
- Power Dissipation: 3.7W
- Fast Switching Times: Rise Time 10ns Fall Time 10ns
The Vishay P-FET is a high-performance power MOSFET designed for efficient switching applications. With a maximum drain to source voltage of 40V and a continuous drain current of 35A, this component is ideal for a variety of power management solutions. Its compact PowerPak 1212-8 package ensures easy integration into space-constrained designs while maintaining excellent thermal performance. This P-FET is suitable for applications requiring high reliability and efficiency.
This MOSFET is commonly used in power management applications, enabling efficient switching in various electronic devices. With a high continuous drain current and low on-resistance, it is ideal for automotive, industrial, and consumer electronics. Designers and engineers utilize this component for its reliability and thermal performance in space-constrained environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.