SI1026X-T1-GE3
- Description
- SI1026X-T1-GE3 Dual N-Channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 305mA
- Drain to Source Resistance
- 1.4O
- Input Capacitance
- 30pF
- Datasheet
Quantity
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- Dual N-Channel Configuration
- Maximum Drain to Source Voltage: 60 V
- Continuous Drain Current: 0.3 A
- Low On-Resistance: 1.4 Ω
- Fast Switching Times: 15 ns Turn-On Delay and 20 ns Turn-Off Delay
- Compact 6-Pin SC-89 Package
The Vishay SI1026X-T1-GE3 is a versatile Dual N-Channel MOSFET Transistor designed for efficient power management in various electronic applications. With a compact 6-Pin SC-89 package, this MOSFET offers reliable performance with a maximum Drain to Source Voltage of 60 V and a Continuous Drain Current of 0.3 A. Its low on-resistance and fast switching capabilities make it an ideal choice for high-speed switching applications, ensuring optimal efficiency and thermal performance.
The SI1026X-T1-GE3 Dual N-Channel MOSFET Transistor is designed for efficient switching applications, suitable for power management in consumer electronics and automotive systems. It features a compact 6-Pin SC-89 package, making it ideal for space-constrained environments. Engineers and developers use this component to optimize performance in circuits requiring low on-resistance and reliable current handling up to 0.3 A.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.