SI2323DS-T1-E3
- Description
- MOSFET, Power, P-Channel, Vdss -20V, Rds(on) 0.031 Ohm, Id -3.7A, TO-236 (SOT-23), Pd 0.75W
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 3.7A
- Drain to Source Resistance
- 39mΩ
- Input Capacitance
- 1.02nF
- Datasheet
Quantity
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- Low Rds(on): 39mΩ for efficient power management
- Continuous Drain Current: 3.7A for reliable performance
- Compact SOT-23 Package for space-saving designs
- Wide Operating Temperature Range: -55°C to 150°C for versatile applications
- Lead Free and RoHS Compliant for environmental safety
The Vishay Power P-Channel MOSFET is designed for high-efficiency switching applications, offering exceptional performance in a compact TO-236 (SOT-23) package. With a maximum Drain to Source Voltage of -20V and a low Rds(on) of 0.031 Ω, this MOSFET ensures minimal power loss and enhanced thermal management. Its robust specifications make it suitable for a variety of applications, including power management and signal switching in consumer electronics and industrial systems.
The Vishay MOSFET, Power, P-Channel, is commonly used in low-voltage applications requiring efficient switching and amplification. With a maximum Drain-Source voltage of -20V and Rds(on) of 0.031 Ohm, it is suitable for power management in consumer electronics, automotive, and industrial control systems. Engineers and designers working on compact PCB layouts frequently utilize this device due to its small SOT-23 package.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.