SI7232DN-T1-GE3

• Dual N-Channel MOSFET with Two Independent Channels
• Rated at 20V Drain-to-Source with 10A Continuous Drain Current per Channel
• On-Resistance of 13.5 Milliohms typical, 16.4 Milliohms Maximum
• Gate-to-Source Voltage Rating of 8V
• 8-Pin PowerPAK 1212 Package Measuring 3.05mm Square
• Operating Temperature Range of -55°C to 150°C

The SI7232DN-T1-GE3 from Vishay is a dual N-channel MOSFET rated at 20V drain-to-source, with each channel carrying a continuous drain current of 10A. On-resistance is 13.5 milliohms typical and 16.4 milliohms maximum, with a gate-to-source rating of 8V. The SI7232DN-T1-GE3 is supplied in an 8-pin PowerPAK 1212 surface-mount package measuring 3.05mm square and operates from -55°C to 150°C.

Putting two matched N-channel MOSFETs in one package halves the board area of a synchronous switching stage and keeps the parasitic inductance between the high-side and low-side devices low. The SI7232DN-T1-GE3 suits synchronous buck converters, point-of-load regulators, battery charging and protection circuits, and low-voltage load switching. Its 20V rating and low on-resistance target 5V and 12V rails in computing, networking, and portable equipment. Power supply designers use dual packages like this where two switches must be placed close together in a compact layout.