SI7489DP-T1-E3

• Single P-Channel Enhancement MOSFET, 100 V Vds, 20 V Vgs
• Continuous Drain Current 7.8 A per the Verified Attribute Record
• Maximum on-Resistance 41 M Ohm, 3 V Threshold Voltage
• 4.6 nF Input capacitance, 15 Ns Turn-on and 100 Ns Turn-Off Delay
• 8-Pin SOIC package, 4.9 Mm X 5.89 mm, 1.04 Mm Height
• -55 C to 150 C Operating range, 150 C Maximum Junction Temperature
• RoHS compliant, Lead free, Tape and Reel Packaging

The Vishay SI7489DP-T1-E3 is a single P-channel MOSFET transistor rated at 100 V drain-to-source with a 20 V gate-to-source rating, supplied in an 8-pin SOIC surface-mount package. Its record lists a continuous drain current of 7.8 A, a maximum on-resistance of 41 m Ohm, a 3 V threshold voltage, and a 4.6 nF input capacitance, with switching times of 15 ns turn-on delay, 160 ns rise, 100 ns turn-off delay and 100 ns fall. The SI7489DP-T1-E3 operates from -55 C to 150 C with a 150 C maximum junction temperature and is RoHS compliant and lead free. Note that the product name quotes 28 A while the verified current attribute is 7.8 A; confirm the current rating and its test conditions against the Vishay datasheet before designing in.

The SI7489DP-T1-E3 is used as a high-side switch or load switch on rails up to 100 V, where a P-channel device simplifies gate drive because the gate can be referenced to the source rail rather than a bootstrapped supply. Common placements are power path selection, reverse-polarity and inrush protection, hot-swap and load disconnect circuits, and secondary-side synchronous rectification in isolated converters. The SOIC-8 footprint suits board-level power distribution in telecom, industrial control, and 48 V-adjacent equipment. Buyers are power supply and industrial equipment designers, contract manufacturers, and distributors supplying board-level protection and switching designs.