SIB452DK-T1-GE3
- Description
- SIB452DK-T1-GE3 N-Channel MOSFET Transistor; 0.67 A; 190 V; 6-Pin SC-75
- Gate to Source Voltage (Vgs)
- 16V
- Drain to Source Voltage (Vdss)
- 190V
- Continuous Drain Current (ID)
- 670mA
- Drain to Source Resistance
- 1.8O
- Input Capacitance
- 135pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- N-channel MOSFET, 190V Vdss
- 670mA continuous drain current
- 2.4O maximum on-resistance (Rds on)
- 1.5V threshold voltage, 16V Vgs rating
- 6-pin SC-75 surface-mount package
- -55°C to 150°C operating temperature range
The Vishay SIB452DK-T1-GE3 is a single N-channel MOSFET rated for a 190V drain-to-source voltage and 670mA continuous drain current. It offers a 2.4O maximum on-resistance and a 1.5V threshold voltage in a 6-pin SC-75 surface-mount package. The device operates from -55°C to 150°C with up to 13W power dissipation.
The SIB452DK-T1-GE3 is used for high-voltage, low-current switching in power management, gate driving, and interface circuits. Its compact SC-75 package suits space-constrained boards needing a robust high-voltage switch. Hardware designers specify this Vishay MOSFET in industrial, telecom, and power-supply applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.