IRFD120PBF
- Description
- Single N-Channel 100 V 0.27 Ohms Through Hole Power MOSFET - HVMDIP-4
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 1.3A
- Drain to Source Resistance
- 270mO
- Input Capacitance
- 360pF
- Datasheet
Quantity
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- Drain to Source Voltage: 100 V
- Continuous Drain Current: 1.3 A
- Rds On Max: 270 mΩ
- Gate to Source Voltage: 20 V
- Max Operating Temperature: 175°C
- Lead Free and RoHS Compliant
The Vishay Single N-Channel 100 V 0.27 Ohms Through Hole Power MOSFET - HVMDIP-4 is designed for high-efficiency power management applications. This robust MOSFET features a low on-resistance and high voltage rating, making it ideal for various electronic circuits. With a compact DIP package and a wide operating temperature range, it ensures reliable performance in demanding environments. This component is perfect for applications requiring efficient switching and power control.
The Single N-Channel 100 V 0.27 Ohms Through Hole Power MOSFET - HVMDIP-4 is commonly used in power management applications, including motor control, power supply circuits, and other robust switching applications. With a low on-resistance and high current rating, it is ideal for efficient power conversion. Engineers and designers in the electronics industry use this MOSFET to optimize device performance and thermal management.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.