SI7172DP-T1-GE3

• Single N-Channel Power MOSFET, 200V Vdss
• 5.9A Continuous Drain Current with 70 Milliohm Maximum Rds(on)
• 4V Gate Threshold voltage, 20V Maximum Vgs
• 2.25nF Input capacitance, 11ns Rise and 9ns Fall Times
• 8-Pin PowerPAK SO-8 Surface-Mount package, 5.4W Dissipation
• -55C to 150C Operating Temperature range, RoHS Compliant

The SI7172DP-T1-GE3 is a Vishay single N-channel power MOSFET rated at a 200V drain-to-source breakdown voltage with 5.9A of continuous drain current and 70 milliohms maximum on-resistance. It has a 4V threshold voltage, a 20V maximum gate-to-source voltage, 2.25nF of input capacitance, and switching times of 11ns rise and 9ns fall. The SI7172DP-T1-GE3 is supplied in a PowerPAK SO-8 style 8-pin surface-mount package rated to 5.4W and from -55C to 150C.

A 200V N-channel MOSFET in a surface-mount power package is used as the switching element in offline and isolated power supplies, telecom and industrial DC-DC converters, class-D amplifier output stages, motor drive half-bridges, and solid-state relay and load-switching circuits. The 200V rating gives headroom over rectified low-line AC and high-voltage intermediate buses where a 100V device would be marginal. The PowerPAK SO-8 style footprint gives near-D-PAK thermal performance in an SO-8 board area, which power supply designers use to raise density without moving to a through-hole package.