SI7460DP-T1-E3
- Description
- Single N-Channel 60 V 0.0096 Ohms Surface Mount Power MOSFET - PowerPAK-SO-8
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 11A
- Drain to Source Resistance
- 9.6mO
- Datasheet
Quantity
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- Surface Mount Design for Easy Integration
- Maximum Drain to Source Voltage: 60V
- Continuous Drain Current: 11A
- Low On-Resistance: 9.6mΩ
- Fast Switching Times with Rise Time: 16ns and Fall Time: 30ns
- Wide Operating Temperature Range: -55°C to 150°C
The Vishay Single N-Channel Power Mosfet is designed for high-efficiency applications requiring reliable performance in a compact form factor. With a maximum drain to source voltage of 60V and a low on-resistance of 9.6mΩ, this surface mount device is ideal for power management in various electronic circuits. Its robust construction and excellent thermal performance make it suitable for demanding environments, ensuring optimal operation across a wide temperature range.
The Single N-Channel 60 V Power Mosfet is used in various applications that require efficient power management, such as DC-DC converters, motor drivers, and power switching. With its low on-resistance and high current capability, it is ideal for both consumer electronics and industrial applications. Engineers and designers utilize this component to enhance performance while maintaining compact designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.